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DRAM Chip
Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since even "nonconducting" transistors always leak a small amount, the capacitors will slowly discharge, and the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory. The main memory (the "RAM") in personal computers is dynamic RAM (DRAM). It is the RAM in desktops, laptops and workstation computers as well as some of the RAM of video game consoles. The advantage of DRAM is its structural simplicity: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed. The transistors and capacitors used are extremely small; billions can fit on a single memory chip.
Memory > RAM > DRAM Chip
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
K4B4G0846D-BYK0 | Samsung | 201531+ | 91 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 136 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 146 | 波兰 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 136 | 日本 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 3588 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | - | 15239 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 136 | 香港 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 149 | 香港 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 136 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 2023+ | 1500 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201531+ | 136 | 中国 | 要求报价 | |
K4B4G0846D-BYK0 | Samsung | 201404 | 20 | 以色列 | 要求报价 |
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