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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > RF Diodes-PIN > Varactor
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
BB535 | Infineon | 2003+ | 118370 | 韩国 | 要求报价 | |
BB535 | Infineon | 200605 | 3000 | 德国 | 要求报价 | |
BB535 | Infineon | 2006+ | 3300 | 中国 | 要求报价 | |
BB535 | Infineon | 200428 | 2404 | 德国 | 要求报价 |
Transistor > Thyristors > Bipolar Transistors > GP BJT
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
PBSS5350D | NXP | 2016+ | 860 | 中国 | 要求报价 | |
PBSS5350D | NXP | 200646+ | 1790 | 中国 | 要求报价 | |
PBSS5350D | NXP | 200934 | 4000 | 德国 | 要求报价 | |
PBSS5350D | NXP | - | 2265 | 中国 | 要求报价 | |
PBSS5350D | NXP | 2009+ | 2800 | 香港 | 要求报价 | |
PBSS5350D | NXP | - | 3000 | 德国 | 要求报价 | |
PBSS5350D | NXP | 2022+ | 3000 | 美国 | 要求报价 | |
PBSS5350D | NXP | 200814 | 4000 | 德国 | 要求报价 | |
PBSS5350D | NXP | 201447+ | 6000 | 香港 | 要求报价 | |
PBSS5350D | NXP | 2009+ | 941 | 德国 | 要求报价 | |
PBSS5350D | NXP | - | 1790 | 中国 | 要求报价 | |
PBSS5350D | NXP | 2012+ | 6000 | 香港 | 要求报价 | |
PBSS5350D | NXP | - | 12000 | 中国 | 要求报价 | |
PBSS5350D | NXP | 2023+ | 15000 | 中国 | 要求报价 | |
PBSS5350D | NXP | 200646+ | 1790 | 中国 | 要求报价 | |
PBSS5350D | NXP | 201211+ | 3000 | 香港 | 要求报价 | |
PBSS5350D | NXP | 2014+ | 3000 | 香港 | 要求报价 | |
PBSS5350D | NXP | 2022+ | 3000 | 韩国 | 要求报价 | |
PBSS5350D | NXP | 2019+ | 15000 | 日本 | 要求报价 | |
PBSS5350D | NXP | - | 15000 | 中国 | 要求报价 | |
PBSS5350D | NXP | 2009+ | 2800 | 中国 | 要求报价 |
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