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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > Bipolar Transistors > GP BJT
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
ZXTN2010ZTA | Diodes | 2017+ | 80000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2021+ | 220000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 24000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 31000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 10000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 201642 | 6000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 27600 | 新加坡 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 4222 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 201616 | 213 | 德国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 201618 | 1000 | 德国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 201620 | 4000 | 德国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 26804 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 10000 | 韩国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 15000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 45000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 9000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2022+ | 29100 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 5000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 98800 | 新加坡 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2023+ | 50000 | 香港 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2018+ | 6356 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2016+ | 1789 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2022+ | 30000 | 中国 | 要求报价 | |
ZXTN2010ZTA | Diodes | 2022+ | 3497 | 新加坡 | 要求报价 | |
ZXTN2010ZTA | Diodes | - | 80000 | 中国 | 要求报价 |
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